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The chemical potential of lead-L is fiL considered as the zero point of energy of the system. fiR and fiD, the chemical potential in other leads, are fixed at fiL -0, respectively. When the electron transport is in the linear regime and at low temperature, the current flow reduces to J /fa = -G/fL 8 . So the current flow in lead-f3 is proportional to the linear conductances G/fL,a = (e /h)T/fL,a (OJ) I",~o with f3=R or D. 2 38 3. Numerical results and discussion We are first interested in the characteristics of the linear conductance spectrum with the modulation of the magnetic flux.

10,083039 (2008). 10. F. Uhlik, R. Gatti, F. Montalenti, J. : Condens. Matter (in press). PHYSICS. CHEMISTRY AND APPLICATION OF NANOSTRUCTURES, 2009 INVITED ELECTROMODULATION SPECTROSCOPY OF SEMICONDUCTOR NANOSTRUCTURES: III-NITRIDES AND DILUTE NITRIDES R. pl Contactless electroreflectance (CER) spectroscopy was applied to study the selected semiconductor nanostructures from the III-nitride and dilute nitride family of semiconductor materials. In the case of III-nitrides, the built-in electric field in AIGaN/GaN heterostructures have been determined by measuring the AIGaN-related Franz-Keldysh oscillation and analyzing its period.

8. O. , Quantum Optics (University Press, Cambridge, 2001). J. , Phys. Rev. Lett. 91, 127401 (2003). G. Ya. , Phys. Rev. B 76, 195328 (2007). Th. , Phys. Rev. Lett. 94, 137404 (2005). J. , Phys. Rev. B 74, 165330(2006). 1. , Phys. Rev. B 73, 1653 18(2006). V. Tsukanov, Phys. Rev. B 73, 085308 (2006). R. Shen, The Principles of Nonlinear Optics (JohnWiley & Sons, New York,1984). 9. A. , J Electronic Materials 29, 494 (2000). 10. M. P. Pitaevskii, Physical Kinetics (Pergamon, Oxford, 198 I). I I.

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