By Takashi Nakada, Hiroshi Nakamura
As a step towards final low-power computing, this publication introduces normally-off computing, which contains inactive parts of desktops being aggressively powered off with the aid of new non-volatile stories (NVMs). as the strength intake of recent info units strongly relies on either and software program, co-design and co-optimization of and software program are crucial to enhance strength potency.
The e-book discusses quite a few subject matters together with (1) info of low-power applied sciences together with strength gating, (2) features of a number of new-generation NVMs, (3) normally-off computing structure, (4) very important applied sciences for enforcing normally-off computing, (5) 3 functional implementations: healthcare, cellular info units, and sensor community structures for clever urban functions, and (6) similar examine and development.
Bridging computing method and rising reminiscence units, the publication is designed for either and software program designers, engineers, and builders as accomplished fabric for figuring out normally-off computing.
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Extra info for Normally-Off Computing
Example text
A SRAM’s large static power is due to the leak current between the source and drains and through the gate of field effect transistor (FET). The DRAM requires a cyclic refresh operation to compensate for the leaking charge from the capacitor. Typically, every 10 ms, all stored bits must be read out and restored to avoid information loss. Non-volatile memories do not require power to keep information. However, actual power dissipation depends on the controller of the memory array. The NAND consumes about 10 mW/page when powered.
Panasonic: Panasonic starts world’s first mass production of ReRAM Mounted Microcomputers. html 25. : IEEE International Solid-State Circuits Conference (ISSCC) Digest of Technical Paper 2013, pp. 210–211 (2013) 26. : IEEE International Solid- State Circuits Conference (ISSCC) Digest of Technical Papers, pp. 338–339 (2014) 27. : Phys. Rev. Lett. 21, 1450 (1968) 28. : J. Appl. Phys. 69, 2849 (1991) 29. Samsung: Samsung announces production start-up of its next-generation nonvolatile memory PRAM.
These two retention degradation modes progress with a logarithm of time (change decreases with progress of time in Fig. 15). Generally, high temperature tends to accelerate degradation, but there is a product guaranteeing a memory access and data retention to 125 ◦ C [38]. Fig. 14 Modes of data retention degradation; relaxation and imprint Fig. 15 Logarithm plot regarding data retention 3 Non-volatile Memories 47 Fig. 16 Mode of endurance Fig. 17 Logarithm plot regarding endurance Endurance Endurance has a phenomenon called fatigue in which attainable ferroelectric polarization decreases by repeating the reading and writing, as shown in Figs.