By E. E. Kotlyar, T. N. Nazarchuk (auth.), G. V. Samsonov (eds.)
Read Online or Download Chemical Properties and Analysis of Refractory Compounds / Khimicheskie Svoistva I Metody Analiza Tugoplavkikh Soedinenii / Химические Свойства И Методы Анализа Тугоплавких Соединений PDF
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Extra info for Chemical Properties and Analysis of Refractory Compounds / Khimicheskie Svoistva I Metody Analiza Tugoplavkikh Soedinenii / Химические Свойства И Методы Анализа Тугоплавких Соединений
7 DU"""'~"" [, sub- . solution. 10 The rate of oxidation of titanium, zirconium, and niobium hydrides was studied by burning hydride samples of 1 g in weight in a quartz reactor placed in a resistance furnace in a current of oxygen; the water vapor formed as a result of oxidation was determined gravimetrically, and the hydride was weighed before and after the experiment. The degree of oxidation of the hydride was estimated both from the amount of water vapor trapped and from the weight increment of the oxidized hydride.
1 Powders of ternary B-As-P alloys were obtained by two methods. In the first, a mixture of all three components was taken for the reaction, starting from concentrations lying on the quasi-binary BAs-BP section; in the second, a binary alloy of phosphorus and arsenic was taken and the calculated amount of boron was added. After holding the mixtures in vacuumsealed quartz ampoules at 800-1100°C, depending on the composition, the phase composition was studied by x-ray diffraction and the proportions of the principal components were determined by chemical analysis.
Oxidation isotherms of boron phosphide in air. 4 log 3 2 240 2801;'min T Fig. 3. Results of boron phosphide oxidation expressed in log y - log T coordinates. pleting the experiment, the sample was withdrawn from the heating zone, and the reaction products, carefully separated from the residual phosphide, were subjected to chemical and x-ray analysis. The data relating to the air oxidation of boron, gallium, and indium phosphides are presented in Tables 1 and 2 and Figs. 2-5. The results showed that microcrystalline boron phosphide was oxidation-resistant at temperatures up to 600°, gallium phosphide to 7000, and indium phosphide to 700°C.